transistors 1 publication date: february 2003 sjc00144bed 2SC3934 silicon npn epitaxial planar type for high-frequency wide-band low-noise amplification features ? high transition frequency f t ? s-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing absolute maximum ratings t a = 25 c parameter symbol conditions min typ max unit collector-base cutoff current (emitter open) i cbo v cb = 10 v, i e = 0 100 na emitter-base cutoff current (collector open) i ebo v eb = 2 v, i c = 01 a forward current transfer ratio h fe v ce = 10 v, i c = 10 ma 40 ? transition frequency f t v ce = 10 v, i c = 10 ma, f = 0.8 ghz 4.5 ghz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 1.2 pf (common base, input open circuited) forward transfer gain ? s 21e ? 2 v ce = 10 v, i c = 20 ma, f = 0.8 ghz 9 12 db maximum unilateral power gain g um v ce = 10 v, i c = 20 ma, f = 0.8 ghz 12 14 db noise figure nf v ce = 10 v, i c = 5 ma, f = 0.8 ghz 1.3 2.5 db electrical characteristics t a = 25 c 3 c unit: mm parameter symbol rating unit collector-base voltage (emitter open) v cbo 15 v collector-emitter voltage (base open) v ceo 12 v emitter-base voltage (collector open) v ebo 2.5 v collector current i c 30 ma peak collector current i cp 50 ma collector power dissipation p c 150 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c marking symbol: 1u 2.1 0.1 1.3 0.1 0.3 +0.1 ?0.0 2.0 0.2 1.25 0.10 (0.425) 1 3 2 (0.65) (0.65) 0.2 0.1 0.9 0.1 0 to 0.1 0.9 +0.2 ?0.1 0.15 +0.10 ?0.05 5? 10? 1: base 2: emitter 3: collector eiaj: sc-70 smini3-g1 package note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors.
2SC3934 2 sjc00144bed v ce(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce i c ? v be c ob ? v cb nf ? i c s 11 , s 22 1 0 0.2 ? 0.2 0.4 ? 0.4 0.8 ? 0.8 ? 0.6 1.5 ? 1.5 ? 2 ? 3 ? 4 ? 5 ? 10 2 3 4 5 10 ? 1 10 1.5 5 4 3 2 1 .8 .6 .4 .2 1 000 mhz 1 000 mhz s 22 s 11 800 mhz 800 mhz 500 mhz 500 mhz v ce = 10 v i c = 20 ma e : earth 0 160 40 120 80 0 200 160 120 80 40 collector power dissipation p c ( mw ) ambient temperature t a ( c ) 012 10 8 26 4 0 30 25 20 15 10 5 t a = 25 c 250 a 200 a 150 a 100 a 50 a i b = 300 a collector current i c ( ma ) collector-emitter voltage v ce ( v ) 0 2.0 1.6 0.4 1.2 0.8 0 60 50 40 30 20 10 v ce = 10 v t a = 75 c ? 25 c 25 c base-emitter voltage v be ( v ) collector current i c ( ma ) 0.1 1 10 100 0.01 0.1 1 10 100 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0.1 1 10 100 0 240 200 160 120 80 40 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) 1 10 100 0 8 6 2 4 t a = 25 c v ce = 10 v transition frequency f t ( ghz ) collector current i c ( ma ) 1 10 100 0 1.2 1.0 0.8 0.6 0.4 0.2 i e = 0 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf) 1 10 100 0 8 6 2 4 r g = 50 ? v ce = 10 v f = 800 mhz noise figure nf ( db ) collector current i c ( ma )
2SC3934 3 sjc00144bed s 11 , s 22 + 90 + 60 ? 60 + 120 ? 120 + 30 ? 30 + 150 ? 150 180 0 ? 90 ? 30 5 15 20 10 ? 15 ? 10 ? 25 ? 20 1 000 mhz v ce = 10 v i c = 20 ma e : earth s 21 s 12 1 000 mhz 800 mhz 800 mhz 500 mhz 500 mhz
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